STRUCTURA SUPRAFEŢEI STRATURILOR DE AlN DEPUSE PE Si PRIN METODA HVPE LA ETAPA INIŢIALĂ DE OBŢINERE

Simion RAEVSCHI, Mihail KOMPAN* , Yurii ZHILYAEV* , Leonid GORCEAC, Vasile BOTNARIUC Laboratorul de cercetări fundamentale „Fizica Semiconductoarelor” * Institutul Fizico-Tehnic „A.Ioffe”, Sankt Petersburg, Russia

Rezumat

The surface structure of AIN layers deposited on the Silicon substrates at the initial stage of germination was studied by the Atomic Force Microscopy (AFM) method. The layers have been deposited by the Hydride Vapor Phase Epitaxy (HVPE) at 1100o C. It was determined that: a) germination follows the 3D model; b) mechanisms of layers growth are changing at the initial deposition stage; c) layers relief can be described in the approximation of a polynomial with elementary Gauss functions as arguments.