EVOLUAREA PARTICULELOR DISPERSATE DE AlN DEPUSE PE Si PRIN METODA HVPE LA ETAPA DE FORMARE A STRATULUI CONTINUU

Simion RAEVSCHI, Mihail KOMPAN* , Yurii ZHILYAEV* , Leonid GORCEAC, Vasile BOTNARIUC LCŞ „Fizica Semiconductoarelor”, * Institutul Fizico-Tehnic „A.Ioffe”, Sankt Petersburg, Rusia

Rezumat

Evolution of growth of the disperse particles of AlN which has been grown up on substrates of silicon during formation of a continuous layer are studies by AFM (Atomic Force Microscopy ) method. Layers have been grown up by HVPE (Hydride Vapor Phase Epitaxy) method at 1100o C. It is established: a) nunucleation occurs according to three dimensional model; b) layers are formed of two categories of disperse particles; c) growth rate of categories differ; d) at an initial stage of growth there is a latent period of time when superficial concentration of disperse particles remains to a constant.