STRATURI SUBŢIRI DE CdS DEPUSE DIN SOLUŢII LICHIDE (BAIE CHIMICĂ)

Vasilii BOTNARIUC, Leonid GORCEAC, Andrei COVAL, Simion RAEVSCHI, Valdec MICLI∗ , Boris CINIC LCŞ „Fizica semiconductorilor” ∗ Tallin University of Technology, Estonia

Rezumat

Thin layers of CdS were deposited on InP (100) substrates with a (3...5) arc degrees misorientation relative to (110) using water solutions of CdSO4, (NH4)2SO4, NH4OH, NH4Cl and CS(NH2)2 for synthesis. The morphology, atomic composition, photoluminescence and electrical properties of the deposited layers were investigated. The morphology of the CdS layers is characterized by a granular structure that is not changing under thermic treatment. A band in the energy interval (1,55 – 3,1) eV at 77 K with the maximum at 2,282 eV is observed in the photoluminescence spectra of the thin layers. Under thermic treatment from 200°C to 500°C in hydrogen the concentration of charge carriers is increasing from 2⋅1017 cm-3 to 2⋅1018 cm-3.