UNELE PROPRIETĂŢI OPTICE ALE STRATURILOR SUBŢIRI DE GaSe ŞI GaS DOPATE CU Cu

Petru GAŞIN*, Elmira CUCULESCU, Igor EVTODIEV, Sergiu ANGHEL, Mihail CARAMAN Catedra Meteorologie, Metrologie şi Fizică Experimentală *Catedra Fizica Aplicată şi Informatică

Rezumat

GaS and GaSe doped with Cu thin films have been deposited by "flash" evaporation. The thickness of the layers varied from 138 to 1450 nm. The absorption spectra in the fundamental band edge region have been studied. The optical band gap has been determined as follows: 2.42 eV for GaS (Cu) and 1.92 eV for GaSe (Cu). The fabrication temperature for obtaining amorphous and nanocrystalline GaSe has been determined as 390 K and 623 K respectively.