DISPOZITIVE DIN FOSFURĂ DE INDIU BAZATE PE EFECTUL FOTOVOLTAIC

Vasile BOTNARIUC, Leonid GORCEAC, Andrei COVAL, Sergiu VATAVU, Boris CINIC, Corneliu ROTARU, Simion RAEVSCHI Universitatea de Stat din Moldova

Abstract

INDIUM PHOSPHORUS DEVICES BASED ON THE PHOTOVOLTAIC EFFECT Homo- and hetero-junctions of p-InP and n-CdS were made by applying the methods of open volume gas phase epita- xy, chloride system, HVPE (Hydride Vapor Phase Epitaxy), and quasi-closed volume in hydrogen. It was established that the efficiency of photovoltaic cells based on hetero-n + CdS-p-p + InP junctions with active photo surface of 3 cm 2 and on homo n + - p- p + InP junctions (1 cm 2 ) is 12% and, respectively, 7.3% under standard lighting conditions, AM1 (1000 W. m -2 ). The maximum external quantum efficiency is 75-80% for the hetero n + CdS - p- p + InP junction and 70% for the n + -p-p + InP homo junction in the range (600-900) nm of the electromagnetic spectrum. The maximum absolute photosensitivity of 0.51 A/W is characteristic for the hetero junction n + CdS - p- p + InP with intermediate epitaxial layer (p = 6,510 16 cm -3 ). Such hetero junctions can be used for the development of photo detectors in the VIS range. Keywords: InP, CdS, HVPE, epitaxy, photovoltaic cell, photo detector, efficiency, photosensitivity.