THERMAL CONDUCTIVITY OF PLANAR SEMICONDUCTOR HETEROSTRUCTURES

Артур АСКЕРОВ Молдавский государственный университет

Abstract

In this paper there had been investigated theoretically the phonon and thermal properties of heterostructures based on planar silicon and germanium using «Valence Force Field» model and were performed calculations of thermal conductivity and heat flows in these heterostructures. It is shown that there is a strong splitting of the phonon spectrum, caused by spatial confinement of phonon modes. Depending on the configuration of the heterostructure, the oscillations are either over the whole depth or focus in the cladding layers or in the inner layer. In the Si / Ge / Si heterostructures there is a significant drop in thermal conductivity compared with homogeneous plates of silicon and germanium due to the strong hybridization of the phonon modes in different layers. Keywords: heterostructure, thermal conductivity, VFF, phonon.