SOLAR CELLS BASED ON INDIUM PHOSPHIDE HOMOJUNCTION

Vasile BOTNARIUC, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Ion INCULEŢ, Simion RAEVSCHI Universitatea de Stat din Moldova

Abstract

p+-p--n+InP homo-junction with or without nCdS frontal layer was obtained by gaseous phase epitaxy method in a In-PCl3-H2 (p-InP, n+InP) system and by quasi-closed volume method (nCdS). From the studies of electrical and photo-electrical properties of these structures it has been established that their photo-sensitivity increases by two orders of magnitude and the SC efficiency is of 12% for the homo-structure with nCdS frontal layer, due to the diminishing of minority charge carriers surface recombination and the peculiarities of electrical and photo-electrical properties of these structures. Keywords: homojunction, indium phosphide, solar cells, technological procedure, epitaxial layer.