TiO2/p-CdTe AND TiO2/n-CdSe PHOTOVOLTAIC DEVICES

Petru DUMITRIU, Tamara POTLOG Universitatea de Stat din Moldova

Abstract

This paper describes the fabrication process and photoelectrical properties of thin film photovoltaic devices based on TiO2/CdSe and TiO2/CdTe structures. The best open circuit voltage and the current density achieved for photovoltaic devices with CdSe reaches 0.43 V and 9.12 mA/cm2 , but for devices with CdTe 0.59 V and 9.5 mA/cm2 , respectively. The highest efficiency achieved for TiO2/CdSe photovoltaic devices is 1.63%, for TiO2/CdTe – 1.98%. Keywords: TiO2, CdTe, CdSe thin films, photovoltaic parameters, external quantum efficiency.