ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF CdS/Cd1-xMnxTe HETEROJUNCTIONS

Petru GASHIN, Valentina NICORICH, Snejana CUZNETSOVA, Petru KETRUSH, Victor SUMAN State University of Moldova

Abstract

Electrical and photoelectrical properties of CdS/Cd1-xMnxTe heterojunction at different temperatures from 293 K to 393 K were studied. The potential barrier at 293 K makes 0,78 V and is linearly decreasing with temperature increase with a temperature coefficient of 5,5·10-3 V·K-1. From lnIinv= f(1/T) dependence at U=1V the activation energy of 0,61 eV was determined. CdS/Cd0,6Mn0,4Te heterojunction spectral sensitivity at 300 K covers the wavelength region. Keywords: heterojunction, CdS / Cd1-xMnxTe, photoelectrical and electrical properties.