THE INFLUENCE OF HIGH TEMPERATURE ANNEALING IN NITROGEN OR VACUUM ON PROPERTIES OF GAN LAYERS DEPOSITED ON SI(111) BY HVPE MEHOD

Vasile BOTNARIUC, Boris CINIC, Andrei COVAL, Petru GAŞIN, Leonid GORCEAC, Simion RAEVSCHI Universitatea de Stat din Moldova

Abstract

The influence of high temperature annealing in nitrogen and vacuum of GaN layers deposited by chemical reactions transport (HVPE) in (H2-NH3-HCl-Ga-Al) system on their properties was studied. In the photoluminescence (PL) spectra at 300 K of the untreated layers two recombination radiation bands with the plats at 370 nm and 555 nm were revealed. At the layers heat treatment the intensity of the radiation band at 370 nm increases when at the intensity of the yellow band (555 nm) decreases not significantly at the treatment in the both ambiances. It was shown that the electrical parameters could as well be controlled by using heat treatment in nitrogen and vacuum and this depends on the annealing duration. Keywords: GaN, Si, HVPE, annealing, photoluminescence.