FOTOVOLTAIC CELLS WITH HOMOJUNCTIONS IN InP: REZULTS AND COMPARISONS

Vasile BOTNARIUC, Petru GAŞIN, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Simion RAEVSCHI Universitatea de Stat din Moldova

Abstract

Electrical and photoelectrical properties of InP p-n homojunctions with an intermediate p-InP layer repeatedly grown by HVPE method, with and without frontal nCdS layer were produced and studied. It was found that the deposition of this intermediate p-InP layer increases the cells photosensitivity by 15 ... 20%. The solar energy conversion efficiency of photovoltaic cell (PC) with n+CdS-n+InP-p-InP-p+InP structure is 13.5% at the illumination of 100 mW.cm-2. The efficiency of the PC based on nCdS-pInP heterostructure and an analogic intermediate layer increases to 27% compared with the PC based on n-p--pInP homostructure having a frontal nCdS layer has an efficiency of 17.3%. The possibility of increasing of the efficiency of this PC type is formulated. Keywords: homojunction, heterojunction, photovoltaic cell, efficiency, photosensitivity, indium phosphide, cadmium sulfide.