CAPACITANCE AND ELECTRICAL CONDUCTIVITY STUDIES OF P-INP JUNCTIONS

Vasile BOTNARIUC, Ludmila GAGARA, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Semion RAEVSCHI, Cornel ROTARU Universitatea de Stat din Moldova

Abstract

The capacitance –voltage-conductivity-frequency dependencies of n+-po-p+ InP with and without n+CdS frontal layer, obtained by using of gaseous phase epitaxial technology in a In-PCl3-H2 system and deposition in a quasi-closed volume, were studied. It was established that the impurity distribution in the space charge region of such junctions is of a linear gradient, and at the frequencies of 7…10 MHz the structure impedance is determined by the inductance resistance. The surface state concentration in n+-po-p+InP structures with the n+CdS frontal layer is by an order of magnitude lower than in the same structures without it, which can enhance the efficiency of solar cells based on them. Keywords: Junction, capacitance, voltage, frequency, conductivity, indium phosphide (InP).