SEMICONDUCTOR DIODE MODELING FOR UNIDIMENSIONAL CASE

Galina SPRINCEAN Universitatea de Stat din Moldova

Abstract

The considered problem consists in determination of semiconductor diode parameters. The mathematical formulation of the problem is based on Drift-Diffusion model. The model is given by a set of equations for three unknown functions: ????- the electrostatic potential, n, p - the concentrations for electrons and holes, respectively. The problem is solved numerically on the Scharfetter-Gummel discretization, by means of BI-Conjugate Gradient and Gauss-Jordan methods. As the equations are strongly nonlinear, then in order to obtain the convergent solution we apply the iterative procedure that consists in gradually increasing of the input voltage with small step. The obtaining solutions are used for equation linearization. Keywords: numerical modeling, Drift-Diffusion model, Scharfetter - Gummel discretization, BI-Conjugate Gradient method.