SYNTHESIS AND MORPHOLOGY STUDY OF β-Ga2O3-Ga2S3 STRUCTURES

Veaceslav SPRINCEAN Universitatea de Stat din Moldova

Abstract

The heat treatment (TT) of Ga2S3 nanocrystals at temperatures of 970 K, 1070 K and 1170 K duration of 6 hours forms an oxide film of Ga2O3 on the crystal surface, the structure and thickness of which depends on the duration of heat treatment. The oxide layer consists of porous island nanoforms in the form of nanofibers and nanocrystals. The nanocrystalline size decreases with an increase in heat treatment temperature from 1070 K to 1170 K. Keywords: heat treatment, nano-porous island formations, nanowires, nanocrystallites, morphology of the semiconductor structural surface.