THE STRUCTURE AND THE ELEMENTAL COMPOSITION OF THE Ga2O3 LAYER ON THE SUBSTRATE OF Ga2S3

Veaceslav SPRINCEAN Universitatea de Stat din Moldova

Abstract

Nanostructural formations of single-phase crystallites with Ga2O3 monoclinic crystal lattice were investigated using SEM surface images, XRD patterns, Raman and EDS spectra. Ga2O3 oxide was synthesized by quenching the Ga2S3 single crystals in the normal atmosphere. At quenching temperatures of 1070 and 1170 K, a homogeneous layer of Ga2O3 nanocrystallites with monoclinic crystal lattice is formed. The oxide layer on the sample surface contains an excess of oxygen and sulfur. As the quenching temperature increases from 970 to 1170 K, the sulfur concentration per Ga2O3 surface unit decreases from 0.13 down to 0.05 at.%. Keywords: heat treatment, nano-porous, nanowires, nanocrystallites, Ga2S3-Ga2O3 oxides.