ABSORBŢIA LUMINII ŞI FOTOLUMINESCENŢA CRISTALELOR GaSe:Eu

Dumitru UNTILA LCŞ „Fotonică şi Metrologie Fizică”

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  • USM ADMIN

Rezumat

GaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optically transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450ºC are forming a Eu2O3 and Ga2O3 composite layer.

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2011-02-21

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