HETEROJONCTION nCdS–pInP FOTOVOLTAIC CELLS

Vasile BOTNARIUC, Petru GAŞIN, Leonid GORCEAC, Ion INCULEŢ, Boris CINIC, Andrei COVAL, Simion RAEVSCHI Universitatea de Stat din Moldova

Аннотация

Electrical and photoelectrical properties of nCdS-pInP hetero-junctions with and without intermediate poInP epitaxial layer were studied. It was established that the current flow mechanism at direct biases is determined mainly by the recombination processes in the space charge region of the junction. At the reverse biases the tunneling processes are predominant. The presence of poInP layer leads to the photo-electrical parameters enhancing of hetero-junction: short circuit current increases up to 28,2 mA·cm -2, open circuit voltage up to 0,780V and the efficiency of solar energy conversion up to 15 % (at 300 K and illumination of 100mw/cm2). The photo-sensitivity of nCdS- poInP -pInP is in the wavelength region of λ= 550-950nm with a maximum localized to λ=700-850nm. Keywords: heterojunction, fotovoltaic cells, efficiency, fotosensibility.