NANOSTRUCTURED ZnO THIN FILMS DOPED WITH Al FOR PHOTOELECTRODS IN THE HYBRID STRUCTURES BASED ON THE COPPER PHTALOCYANINE

Vadim FURTUNĂ, Dumitru DUCA, Tamara POTLOG Universitatea de Stat din Moldova

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  • USM ADMIN

Аннотация

In this paper, a study of the structure and optical properties of ZnO thin films doped with Al, both untreated and treated in hydrogen at 445oC, as electrical properties of structures based on them it is presents. Studies on the structure and optical properties were made using X-ray diffraction and UV-VIS spectroscopy. It was found that the ZnO: Al layers were polycrystalline and have a wurtzite structure, crystallite size depends on the technological regime, with increasing concentration of Al their size decreases and annealing in hydrogen leads to decrease in Eg value indifferently of the manufacturing technology. ZnO/CuPc structures were fabricated. Their electrical properties using current-voltage and capacitance-voltage characteristics were investigated. The capacitance-voltage characteristics justify the presence of a space charge region. Keywords: ZnO, CuPc, RF magnetron sputtering, close spaced sublimation method, photovoltaic device.

Опубликован

2016-03-23

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