PHOTOVOLTAIC CELLS WITH n+CdS-po-p+ InP HETEROJUNCTION: TEHNOLOGICAL APPLICATIONS, METHODS AND RESEARCH RESULTS

Vasile BOTNARIUC, Ludmila GAGARA, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Simion RAEVSCHI, Cornel ROTARU Universitatea de Stat din Moldova

Аннотация

Photovoltaic cells (PVC) with nCdS-pInP heterojunction and an intermediate po InP epitaxial layer were obtained and their electrical and photoelectric properties were investigated. The thicknesses of the pInP layer and of the nCdS frontal layer varied in the range of 2.7 to 6.2 μm and 0.9 to 3.6 μm respectively, depending on the deposition time. It was found that photoelectric parameters have maximum values when the thickness of po InP layer is of 4.5 ... 5 μm and for nCdS layer is of 0.9 μm, the maximum efficiency of PCV with the structure n+CdS-po-p+ InP was of 14.6% (100 mWcm-2 ). Keywords: heterojunction, intermediate/frontal epitaxial layer, photovoltaic cell, efficiency, photosensitivity.