OBŢINEREA STRUCTURILOR n+SnO2/nSi ŞI CERCETAREA PROPRIETĂŢILOR ACESTORA: Eugenia BOBEICO*, Leonid BRUC, Mihail CARAMAN, Andrei COVAL, Vladimir FEDOROV, Alexei SIMAŞCHEVICI*, Dormidont ŞERBAN*, Iurie USATÎI Laboratorul Fizica Semiconductorilor *Institutul de Fizică Aplicată al AŞM

USM ADMIN

OBŢINEREA STRUCTURILOR n+SnO2/nSi ŞI CERCETAREA PROPRIETĂŢILOR ACESTORA

Eugenia BOBEICO, Leonid BRUC, Mihail CARAMAN, Andrei COVAL, Vladimir FEDOROV, Alexei SIMAŞCHEVICI, Dormidont ŞERBAN, Iurie USATÎI Laboratorul Fizica Semiconductorilor Institutul de Fizică Aplicată al AŞM

Autori

USM ADMIN Studia Universitas Moldaviae

Rezumat

By the method of pyrolitic spraying spirit solutions of chlorides of tin and antimony transparent (transmission ~ 85%) and conductive (σ ~ 102 Ohm-1cm-1) layers of SnO2:Sb were obtained. By using these layers izotype SIS structures In/n+SnO2:Sb/SiO2/nSi/Cu are produced. Their electrophysical properties are studied. The energy diagram of heterostructure n+SnO2:Sb/nSi is constructed and the mechanism of current transition is determined