OBŢINEREA STRUCTURILOR n+SnO2/nSi ŞI CERCETAREA PROPRIETĂŢILOR ACESTORA

Eugenia BOBEICO*, Leonid BRUC, Mihail CARAMAN, Andrei COVAL, Vladimir FEDOROV, Alexei SIMAŞCHEVICI*, Dormidont ŞERBAN*, Iurie USATÎI Laboratorul Fizica Semiconductorilor *Institutul de Fizică Aplicată al AŞM

Abstract

By the method of pyrolitic spraying spirit solutions of chlorides of tin and antimony transparent (transmission ~ 85%) and conductive (σ ~ 102 Ohm-1cm-1) layers of SnO2:Sb were obtained. By using these layers izotype SIS structures In/n+SnO2:Sb/SiO2/nSi/Cu are produced. Their electrophysical properties are studied. The energy diagram of heterostructure n+SnO2:Sb/nSi is constructed and the mechanism of current transition is determined