STRATURI EPITAXIALE OMOGENE DE CdS OBŢINUTE PE InP ÎN HIDROGEN

Simion RAEVSCHI, Leonid GORCEAC, Petru GAUGAŞ, Vasile BOTNARIUC LCŞ “Fizica Semiconductorilor”

Autori

  • USM ADMIN Studia Universitas Moldaviae

Rezumat

Epitaxial layers of the CdS on InP in the open flowing hydrogen system are obtained. Efficiency of zone method growth from a gas phase is shown at deposition of the homogeneous layers of large area.

Biografie autor

USM ADMIN, Studia Universitas Moldaviae

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Publicat

2007-01-01

Număr

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