STRATURI EPITAXIALE OMOGENE DE CdS OBŢINUTE PE InP ÎN HIDROGEN

Simion RAEVSCHI, Leonid GORCEAC, Petru GAUGAŞ, Vasile BOTNARIUC LCŞ “Fizica Semiconductorilor”

Abstract

Epitaxial layers of the CdS on InP in the open flowing hydrogen system are obtained. Efficiency of zone method growth from a gas phase is shown at deposition of the homogeneous layers of large area.