ИССЛЕДОВАНИЕ КУЛОНОВСКОГО ВЗАИМОДЕЙСТВИЯ В КВАНТОВОЙ ТОЧКЕ Si/SiO2

Калина ИСАКОВА, Денис НИКА, Артур АСКЕРОВ, Надежда ЗИНЧЕНКО, Евгений ПОКАТИЛОВ Кафедра теоретической физики

Abstract

In this paper the investigations of the distribution of the coulomb interaction potential in silicon quantum dot imbedded in the dielectric medium from SiO2 have been fulfilled. Dependence of the interaction potential on the Siquantum dot radius has been obtained and investigated in details. The comparison between distributions of Coulomb interaction potentials with different permittivity of the quantum dot has been carried out.