ЭЛЕКТРИЧЕСКИЕ И ФОТОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ИЗОТИПНЫХ ГЕТЕРОПЕРЕХОДОВ N-SI/ФУЛЛЕРИТ С60

Дорин СПОЯЛЭ НИЛ сверхпроводимости и магнетизма

Abstract

In this paper the results of the research on electric and photoelectric properties of n-Si/fullerite С60 isotype heterojunctions are presented. The analysis of dark current-voltage characteristics is performed being taken into account in the equivalent circuit of heterostructures of series and shunt resistances. It is shown that in the range of lower applied voltage U<0,5 V current-voltage characteristics are determined by generation-recombination processes in the range of space charge, on further increase of applied forward voltage U>0,5 V prevails tunneling or multi-step tunneling-recombination mechanisms of charge transfer.