OBŢINEREA STRATURILOR AlN PE Si PRIN METODA HVPE ŞI CERCETAREA PROPRIETĂŢILOR LOR: Simion RAEVSCHI, Valerii Davydov*, Yurii ZHILYAEV*, Leonid GORCEAC, Vasile BOTNARIUC LCŞ „Fizica Semiconductorilor” *Ioffe Physico-Technical Institute, St.Peterburg, Russia

USM ADMIN

OBŢINEREA STRATURILOR AlN PE Si PRIN METODA HVPE ŞI CERCETAREA PROPRIETĂŢILOR LOR

Simion RAEVSCHI, Valerii Davydov, Yurii ZHILYAEV, Leonid GORCEAC, Vasile BOTNARIUC LCŞ „Fizica Semiconductorilor” *Ioffe Physico-Technical Institute, St.Peterburg, Russia

Authors

USM ADMIN Studia Universitas Moldaviae

Abstract

AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics).