CERCETAREA CELULELOR SOLARE CU HETEROJONCŢIUNEA nCdS-pInP

Leonid GORCEAC, Vasile BOTNARIUC, Simion RAEVSCHI, Andrei COVAL, Andrei CHITOROAGĂ LCŞ „Fizica Semiconductorilor”

Abstract

Photoelectrical dependencies of nCdS-pInP solar cells, as a function of electro physical parameters, crystallographic orientation of InP substrate and of the deposition duration of the nCdS epitaxial for layer are presented. It was established that the maximum value of the effi ciency of solar energy into electrical one is obtained for the holes concentration in the substrate of 2·1016 cm-3, crystallographic orientation (100) and layer growth duration of 25 min. The hetero structure parameters infl uencing the named dependencies are determined.