ФОТОЛЮМИНЕСЦЕНЦИЯ МОНОКРИСТАЛЛОВ ZnSe, ЛЕГИРОВАННЫХ МАРГАНЦЕМ

Abstract

The results on photoluminescence (PL) study of undoped ZnSe crystals and those doped with Mn, Mn + Al, Mn + Cr are reported. The IR PL band with maximum at 950 – 960 nm (1.3 eV) was found in the PL spectra of both sample types at 300K. The samples doped with Mn during the growth process do not show uniform dependence of IR PL band intensity on Mn concentration. The thermal annealing of the as-grown samples in Zn melt completely quenches the IR emission. The intensity of IR emission increases with increasing of Mn concentration in the Mn+Bi melt. It is supposed that IR luminescence is caused by emission centers which contain VZn. The intensity of the intra-shell emission within the Mn ion increases in the samples annealed in Zn melt, however, IR band disappears. Different mechanisms of competition between intra-shell and IR luminescence and IR PL emission are discussed.