STUDIUL PROPRIETĂŢILOR ELECTRICE ŞI FOTOVOLTAICE ALE STRUCTURILOR ITO-Si ÎN BAZA SILICIULUI MULTICRISTALIN
Alexei SIMAŞCHEVICI, Dormidont ŞERBAN, Leonid BRUC, Leonid GORCEAC*, Andrei COVAL*, Vladimir FEDOROV*, Iurie USATÎI Institutul de Fizica Aplicată al AŞM *LCŞ ,,Fizica semiconductorilor”
Аннотация
ITO-polycrystalline p-type silicon structures with surface barriers are obtained by pyrolytical spraying of indium and tin chloride solutions and their electrical and photoelectrical properties are studied. The spectral sensibility range, current transport mechanisms and the parameters of the heterostructure under forward and reverse bias are determined. It is shown the possibility of using these heterojunctions in solar radiation conversion.