PROPRIETĂŢILE ELECTRICE ŞI FOTOELECTRICE ALE MONOSELENIURII DE GALIU DOPAT CU Cd

Liliana DMITROGLO, Elmira VATAVU, Igor EVTODIEV, Mihail CARAMAN LCŞ „Fotonică şi Metrologie Fizică”

Authors

  • USM ADMIN

Abstract

The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe:Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<Eg as well as increase holes' concentration up to 1.42·1017 cm-3.

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Published

2011-11-07

Issue

No. 7 (2011)

Section

Articles