PROPRIETĂŢILE ELECTRICE ŞI FOTOELECTRICE ALE MONOSELENIURII DE GALIU DOPAT CU Cd

Liliana DMITROGLO, Elmira VATAVU, Igor EVTODIEV, Mihail CARAMAN LCŞ „Fotonică şi Metrologie Fizică”

Аннотация

The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe:Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<Eg as well as increase holes' concentration up to 1.42·1017 cm-3.